2SD1620 no.1719-1/4 features less power dissipation because of low v ce (sat), permitting more flashes of light to be emitted. large current capacity and highly resistant to breakdown. excellent linearity of h fe in the region from low current to high current. ultrasmall size supports high-density, ultrasmall-sized hybrid ic designs. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo 30 v collector-to-emitter voltage v cex 20 v collector-to-emitter voltage v ceo 10 v emitter-to-base voltage v ebo 6v collector current i c 3a collector current (pulse) i cp 5a collector dissipation p c 500 mw mounted on a ceramic board (250mm 2 ? 0.8mm) 1.3 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =20v, i e =0a 100 na emitter cutoff current i ebo v eb =4v, i c =0a 100 na dc current gain h fe v ce =2v, i c =3a 140 210 gain-bandwidth product f t v ce =10v, i c =50ma 200 mhz output capacitance cob v cb =10v, f=1mhz 30 pf continued on next page. www.semiconductor-sanyo.com/network ordering number : en1719c 31010ea tk im / 31005tn(pc)/21599th (kt)/n1596ts(koto)8-7707/5277ki/3045mw, ts specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. sanyo semiconductors data sheet 2SD1620 npn epitaxial planar silicon transistor 1.5v, 3v strobe applications
2SD1620 no.1719-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit collector-to-emitter saturation voltage v ce (sat) i c =3a, i b =60ma 0.3 0.4 v collector-to-base breakdown voltage v (br)cbo i c =10
2SD1620 no.1719-3/4 v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v p c -- ta ambient temperature, ta -- c collector dissipation, p c -- w h fe -- i c collector current, i c -- a dc current gain, h fe i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a collector current, i c -- ma f t -- i c gain-bandwidth product, f t -- mhz 0.01 23 5 23 5 23 5 0.1 1.0 10 itr09990 3.2 2.8 0 1.6 1.2 2.4 2.0 0.4 0.8 0 0.2 0.4 0.6 0.8 1.0 1.2 v ce =2v itr09989 v ce =2v 1.0 23 57 23 5 10 3 2 100 3 2 5 7 10 itr09992 10 1000 5 100 3 2 7 7 5 23 57 23 57 100 1000 v ce =10v itr09991 f=1mhz 1000 5 100 3 2 7 7 5 itr09994 1.6 1.4 0.2 0.4 0.8 0.6 1.2 1.0 0 0 160 120 140 100 80 60 40 20 0.1 23 57 23 57 10 1.0 3 2 100 1000 3 2 7 5 3 7 5 2 itr09993 i c / i b =50 mounted on a ceramic board (250mm 2 0.8mm) no heat sink itr09995 1.0 357 3 22 57 3 10 3 2 10 5 7 3 2 5 7 5 7 1.0 3 0.1 dc operation 1m s 10ms 100ms i cp =5a i c =3a single pulse tc=25 c
2SD1620 no.1719-4/4 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party?s intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. this catalog provides information as of march, 2010. specifications and information herein are subject to change without notice. ps
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